pa1950 description the pa1950 is a switching device which can be driven directly by a 1.8 v power source. this device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? 1.8 v drive available ? low on-state resistance r ds(on)1 = 130 m ? max. (v gs = ?4.5 v, i d = ?1.5 a) r ds(on)2 = 176 m ? max. (v gs = ?3.0 v, i d = ?1.5 a) r ds(on)3 = 205 m ? max. (v gs = ?2.5 v, i d = ?1.5 a) r ds(on)4 = 375 m ? max. (v gs = ?1.8 v, i d = ?1.0 a) ordering information part number package pa1950te note sc-95 (mini mold thin type) note marking: tm absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss ?12 v gate to source voltage (v ds = 0 v) v gss m 8.0 v drain current (dc) (t a = 25c) i d(dc) m 2.5 a drain current (pulse) note1 i d(pulse) m 7.0 a total power dissipation (2unit) note2 p t1 1.15 w total power dissipation (1unit) note2 p t2 0.57 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board, t 5 sec. package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 2.8 0.2 1.5 0.95 123 654 1.9 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 6: drain1 1: gate1 5: source1 4: drain2 3: gate2 2: source2 equivalent circuit source 1 body diode gate protection diode gate 1 drain 1 source 2 body diode gate protection diode gate 2 drain 2 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ?12 v, v gs = 0 v ?10 a gate leakage current i gss v gs = m 8.0 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ?10 v, i d = ?1.0 ma ?0.45 ?1.5 v forward transfer admittance | y fs |v ds = ?10 v, i d = ?1.5 a1.0 s drain to source on-state resistance r ds(on)1 v gs = ?4.5 v, i d = ?1.5 a 105 130 m ? r ds(on)2 v gs = ?3.0 v, i d = ?1.5 a 135 176 m ? r ds(on)3 v gs = ?2.5 v, i d = ?1.5 a 160 205 m ? r ds(on)4 v gs = ?1.8 v, i d = ?1.0 a 225 375 m ? input capacitance c iss v ds = ?10 v 220 pf output capacitance c oss v gs = 0 v 90 pf reverse transfer capacitance c rss f = 1.0 mhz 40 pf turn-on delay time t d(on) v dd = ?6.0 v, i d = ?1.5 a15ns rise time t r v gs = ?4.0 v80ns turn-off delay time t d(off) r g = 10 ? 150 ns fall time t f 120 ns total gate charge q g v dd = ?10 v1.9nc gate to source charge q gs v gs = ?4.0 v0.5nc gate to drain charge q gd i d = ?2.5 a0.7nc body diode forward voltage v f(s-d) i f = 2.5 a, v gs = 0 v 0.86 v test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs( ? ) d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = ? 2 ma v gs wave form v ds wave form v gs( ? ) v ds( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% pa1950 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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